Microcharacterization of Semiconductor Devices Using Scanning Tunneling Microscopy

In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface

The great reactivity o f semiconductor surfaces and the easy formation o f oxide layers make in-situ STM imaging o f tlie semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging o f such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system SiINaOH to illustrate the latest advances concern...

Scanning tunneling microscopy of defect states in the semiconductor Bi2Se3

Scanning tunneling spectroscopy images of Bi2Se3 doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in Bi2Se3 can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experim...

Microscopy, Scanning Tunneling

Ultrafast Scanning Tunneling Microscopy

Scanning Tunneling Microscopy

The invention of the scanning tunneling microscope was a singularity event in the field of surface science and condensed matter physics. The ability to visualize individual atoms in an atomic structure was a huge step forward in experimental development, one for which the inventors were awarded the Nobel Prize in Physics in 1986. While a groundbreaking development, the Scanning Tunneling Micros...